Eigen-equation of Electronic Energy in Quantum Dot
نویسندگان
چکیده
منابع مشابه
Energy states and exchange energy of coupled double quantum dot in a magnetic field
The ground state energies of two interacting electrons confined in a coupled double quantum dot (DQD) presented in a magnetic field has been calculated by solving the relative Hamiltonian using variational and exact diagonalization methods. The singlet-triplet transitions in the angular momentum and spin of the quantum dot ground state had been shown .We have studied the magnetic field versus c...
متن کاملEnergy states and exchange energy of coupled double quantum dot in a magnetic field
The ground state energies of two interacting electrons confined in a coupled double quantum dot (DQD) presented in a magnetic field has been calculated by solving the relative Hamiltonian using variational and exact diagonalization methods. The singlet-triplet transitions in the angular momentum and spin of the quantum dot ground state had been shown .We have studied the magnetic field versus c...
متن کاملEnergy Levels of InGaAs/GaAs Quantum Dot Lasers with Different Sizes
In this paper, we have studied the strain, band-edge, and energy levels of cubic InGaAs quantum dots (QDs) surrounded by GaAs. It is shown that overall strain value is larger in InGaAs-GaAs interfaces, as well as in smaller QDs. Also, it is proved that conduction and valence band-edges and electron-hole levels are size dependent; larger QD sizes appeared to result in the lower recombination...
متن کاملVariation of energy density of states in quantum dot arrays due to interparticle electronic coupling.
Subnanometer-resolved local electron energy structure was measured in PbS quantum dot superlattice arrays using valence electron energy loss spectroscopy with scanning transmission electron microscopy. We found smaller values of the lowest available transition energies and an increased density of electronic states in the space between quantum dots with shorter interparticle spacing, indicating ...
متن کاملEnergy-dependent tunneling in a quantum dot.
We present measurements of the rates for an electron to tunnel on and off a quantum dot, obtained using a quantum point contact charge sensor. The tunnel rates show exponential dependence on drain-source bias and plunger gate voltages. The tunneling process is shown to be elastic, and a model describing tunneling in terms of the dot energy relative to the height of the tunnel barrier quantitati...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Universal Journal of Physics and Application
سال: 2016
ISSN: 2331-6535,2331-6543
DOI: 10.13189/ujpa.2016.100505